Electron field emission from narrow band gap semiconductors (InAs)
Identifieur interne : 007A78 ( Main/Repository ); précédent : 007A77; suivant : 007A79Electron field emission from narrow band gap semiconductors (InAs)
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Abstract
We propose to use InAs for the development of effective electron field emitters on the basis of a new technological approach for the preparation of highly textured surfaces which allows one to obtain peculiar fine rod-like micro- and nanostructures. A decrease of the current-voltage characteristics slope by a factor of 3.5 was observed in the Fowler-Nordheim plot with increasing applied voltage. This significant change in the slope is discussed on the basis of two different mechanisms: the inter-valley hot carrier redistribution and the existence of two arrays of nanocathodes with different radii of the top. The developed InAs nanostructures may also find applications in IR-sensitive displays, submicron sources of irradiation and devices with variable bands and barriers.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electron field emission from narrow band gap semiconductors (InAs)</title><author><name sortKey="Litovchenko, V" uniqKey="Litovchenko V">V. Litovchenko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics</s1><s2>Kiev</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Institute of Semiconductor Physics</wicri:noRegion></affiliation></author><author><name sortKey="Evtukh, A" uniqKey="Evtukh A">A. Evtukh</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics</s1><s2>Kiev</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Institute of Semiconductor Physics</wicri:noRegion></affiliation></author><author><name sortKey="Semenenko, M" uniqKey="Semenenko M">M. Semenenko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics</s1><s2>Kiev</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Institute of Semiconductor Physics</wicri:noRegion></affiliation></author><author><name sortKey="Grygoriev, A" uniqKey="Grygoriev A">A. Grygoriev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics</s1><s2>Kiev</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Institute of Semiconductor Physics</wicri:noRegion></affiliation></author><author><name sortKey="Yilmazoglu, O" uniqKey="Yilmazoglu O">O. Yilmazoglu</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institute of Microwave Engineering, Technical University of Darmstadt</s1><s2>Darmstadt 64283</s2><s3>DEU</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Hartnagel, H L" uniqKey="Hartnagel H">H. L. Hartnagel</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institute of Microwave Engineering, Technical University of Darmstadt</s1><s2>Darmstadt 64283</s2><s3>DEU</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Sirbu, L" uniqKey="Sirbu L">L. Sirbu</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>National Center for Materials Study and Testing, Technical University of Moldova</s1><s2>Chisinau 2004</s2><s3>MDA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>Chisinau 2004</wicri:noRegion></affiliation></author><author><name sortKey="Tiginyanu, I M" uniqKey="Tiginyanu I">I. M. Tiginyanu</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>National Center for Materials Study and Testing, Technical University of Moldova</s1><s2>Chisinau 2004</s2><s3>MDA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>Chisinau 2004</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute of Applied Physics</s1><s2>Chisinau 2028</s2><s3>MDA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>Institute of Applied Physics</wicri:noRegion></affiliation></author><author><name sortKey="Ursaki, V V" uniqKey="Ursaki V">V. V. Ursaki</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute of Applied Physics</s1><s2>Chisinau 2028</s2><s3>MDA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>Institute of Applied Physics</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0496277</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0496277 INIST</idno><idno type="RBID">Pascal:07-0496277</idno><idno type="wicri:Area/Main/Corpus">007219</idno><idno type="wicri:Area/Main/Repository">007A78</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Effective field approximation</term><term>Electron field emission</term><term>Fowler Nordheim tunneling</term><term>Hot carriers</term><term>IV characteristic</term><term>Indium arsenides</term><term>Many-valley semiconductors</term><term>Nanostructures</term><term>Narrow band gap semiconductors</term><term>Texture</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Emission électronique champ</term><term>Approximation champ effectif</term><term>Texture</term><term>Caractéristique courant tension</term><term>Effet tunnel Fowler Nordheim</term><term>Porteur chaud</term><term>Semiconducteur bande interdite étroite</term><term>Indium arséniure</term><term>Nanostructure</term><term>Semiconducteur multivallée</term><term>InAs</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We propose to use InAs for the development of effective electron field emitters on the basis of a new technological approach for the preparation of highly textured surfaces which allows one to obtain peculiar fine rod-like micro- and nanostructures. A decrease of the current-voltage characteristics slope by a factor of 3.5 was observed in the Fowler-Nordheim plot with increasing applied voltage. This significant change in the slope is discussed on the basis of two different mechanisms: the inter-valley hot carrier redistribution and the existence of two arrays of nanocathodes with different radii of the top. The developed InAs nanostructures may also find applications in IR-sensitive displays, submicron sources of irradiation and devices with variable bands and barriers.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>22</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electron field emission from narrow band gap semiconductors (InAs)</s1></fA08><fA11 i1="01" i2="1"><s1>LITOVCHENKO (V.)</s1></fA11><fA11 i1="02" i2="1"><s1>EVTUKH (A.)</s1></fA11><fA11 i1="03" i2="1"><s1>SEMENENKO (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>GRYGORIEV (A.)</s1></fA11><fA11 i1="05" i2="1"><s1>YILMAZOGLU (O.)</s1></fA11><fA11 i1="06" i2="1"><s1>HARTNAGEL (H. L.)</s1></fA11><fA11 i1="07" i2="1"><s1>SIRBU (L.)</s1></fA11><fA11 i1="08" i2="1"><s1>TIGINYANU (I. M.)</s1></fA11><fA11 i1="09" i2="1"><s1>URSAKI (V. 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All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>07-0496277</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We propose to use InAs for the development of effective electron field emitters on the basis of a new technological approach for the preparation of highly textured surfaces which allows one to obtain peculiar fine rod-like micro- and nanostructures. A decrease of the current-voltage characteristics slope by a factor of 3.5 was observed in the Fowler-Nordheim plot with increasing applied voltage. This significant change in the slope is discussed on the basis of two different mechanisms: the inter-valley hot carrier redistribution and the existence of two arrays of nanocathodes with different radii of the top. 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